|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ649 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ649 PACKAGE Isolated TO-220 FEATURES * Low on-state resistance: RDS(on)1 = 48 m MAX. (VGS = -10 V, ID = -10 A) RDS(on)2 = 75 m MAX. (VGS = -4.0 V, ID = -10 A) * Low input capacitance: Ciss = 1900 pF TYP. (VDS = -10 V, VGS = 0 V) * Built-in gate protection diode (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg -60 V V A A W W C C A mJ m 20 m 20 m 70 25 2.0 150 -55 to +150 -20 40 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16332EJ1V0DS00 (1st edition) Date Published May 2003 NS CP(K) Printed in Japan 2002 2SJ649 ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Test Condtions VDS = -60 V, VGS = 0 V VGS = MIN. TYP. MAX. Unit -10 A A V S m 20 V, VDS = 0 V -1.5 10 -2.0 20 38 47 1900 350 140 10 10 73 17 m 10 -2.5 VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -10 A VGS = -10 V, ID = -10 A VGS = -4.0 V, ID = -10 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -30 V, ID = -10 A VGS = -10 V RG = 0 Drain to Source On-state Resistance 48 75 m m pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = -48 V VGS = -10 V ID = -20 A IF = 20 A, VGS = 0 V IF = 20 A, VGS = 0 V di/dt = 100 A/s 38 7 10 0.95 49 100 Note Pulsed: PW 350 s, Duty Cycle 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG VGS = -20 0 V - ID VDD BVDSS VDS VGS (-) 0 = 1 s Duty Cycle 1% VDS Wave Form TEST CIRCUIT 2 SWITCHING TIME L VDD PG. D.U.T. RL VGS (-) VGS Wave Form 50 RG 0 10% VGS 90% VDD VDS (-) 90% 90% 10% 10% IAS VDS 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = -2 mA 50 RL VDD PG. 2 Data Sheet D16332EJ1V0DS 2SJ649 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 30 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W 100 25 80 20 60 15 40 10 20 5 0 0 25 50 75 100 125 150 175 0 0 25 50 75 100 125 150 175 TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA - 100 ID(pulse) PW = 100 s ID - Drain Current - A ID(DC) 1 ms - 10 RDS(on) Limited (at VGS = -10 V) DC -1 10 ms Single pulse TC = 25C - 0.1 - 0.1 -1 - 10 - 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - C/W Rth(ch-A) = 62.5C/W 10 Rth(ch-C) = 5.0C/W 1 0.1 Single pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16332EJ1V0DS 3 2SJ649 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -80 FORWARD TRANSFER CHARACTERISTICS -100 ID - Drain Current - A -60 VGS = -10 V ID - Drain Current - A -10 -40 -4.5 V -4.0 V -1 TA = -55C 25C 75C 125C -20 Pulsed 0 0 -1 -2 -3 -4 -5 -0.1 VDS = -10 V Pulsed -2 -3 -4 -5 -0.01 -1 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V VDS = -10 V ID = -1 mA FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 -4.0 -3.0 10 TA = 125C 75C 25C -55C -2.0 1 -1.0 0.1 VDS = -10 V Pulsed -10 -100 0 -50 0 50 100 150 0.01 -0.01 -0.1 -1 Tch - Channel Temperature - C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m 120 100 80 60 40 20 0 -0.1 VGS = -4.0 V -4.5 V -10 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m 80 70 60 50 40 30 20 10 0 0 -2 -4 -6 -8 - 10 - 12 - 14 - 16 - 18 - 20 ID = -10 A Pulsed Pulsed -1 -10 -100 ID - Drain Current - A VGS - Gate to Source Voltage - V 4 Data Sheet D16332EJ1V0DS 2SJ649 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m 90 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 VGS = 0 V f = 1 MHz Ciss 1000 70 VGS = -4.0 V 60 50 40 30 20 10 0 -75 Pulsed -10 V Ciss, Coss, Crss - Capacitance - pF 80 Coss 100 Crss 10 -0.1 -50 -25 0 25 50 75 100 125 150 175 -1 -10 -100 VDS - Drain to Source Voltage - V Tch - Channel Temperature - C SWITCHING CHARACTERISTICS 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V - 50 - 45 - 40 - 35 - 30 - 25 - 20 - 15 - 10 -5 0 0 5 10 15 20 25 30 35 40 VDS ID = -20 A Pulsed -2 -4 VDD = -48 V -30 V -12 V VGS -8 - 10 100 td(off) tf -6 10 tr td(on) 1 -0.1 -1 -10 -100 0 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE -100 Pulsed VGS = -10 V -10 -4.0 V -1 0V 1000 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT di/dt = 100 A/s VGS = 0 V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 100 10 -0.1 -0.01 0 -0.5 -1.0 -1.5 1 0.1 1 10 100 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet D16332EJ1V0DS VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns VDD = -30 V VGS = -10 V RG = 0 5 2SJ649 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 SINGLE AVALANCHE ENERGY DERATING FACTOR 100 VDD = -30 V RG = 25 VGS = -20 0 V IAS -20 A IAS - Single Avalanche Current - A Energy Derating Factor - % 80 IAS1 = -20 A IAS2 = -10 A - 10 60 EAS2 = 100 mJ 40 EAS1 = 40 mJ VDD = -30 V RG = 25 VGS = -20 0 V Starting Tch = 25C -1 20 0 10 100 1m 10 m 25 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - C 6 Data Sheet D16332EJ1V0DS 2SJ649 PACKAGE DRAWING (Unit: mm) Isolated TO-220 (MP-45F) 10.0 0.3 4.5 0.2 2.7 0.2 3.2 0.2 15.0 0.3 3 0.1 4 0.2 0.7 0.1 2.54 1.3 0.2 2.5 0.1 0.65 0.1 1.5 0.2 2.54 1.Gate 2.Drain 3.Source 123 EQUIVALENT CIRCUIT Drain 13.5MIN. 12.0 0.2 Remark Body Diode The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Gate Protection Diode Source Data Sheet D16332EJ1V0DS 7 2SJ649 * The information in this document is current as of May, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
Price & Availability of 2SJ649 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |